Stacking Structure in GaN Grown by GSMBE Method on GaAs (111);
نویسندگان
چکیده
منابع مشابه
GaN nanorods grown on Si (111) substrates and exciton localization
We have investigated exciton localization in binary GaN nanorods using micro- and time-resolved photoluminescence measurements. The temperature dependence of the photoluminescence has been measured, and several phonon replicas have been observed at the lower energy side of the exciton bound to basal stacking faults (I1). By analyzing the Huang-Rhys parameters as a function of temperature, deduc...
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ژورنال
عنوان ژورنال: Materia Japan
سال: 2001
ISSN: 1340-2625,1884-5843
DOI: 10.2320/materia.40.1010